My research vision centers on the next generation of electronics through the discovery and application of novel materials. Specifically, I focus on multifunctional ferroic materials that break spatial and/or time-reversal symmetries, a concept I term as “ferrotronics.” This emerging paradigm aims to integrate memory and logic functionalities within a single device, unlocking transformative potential for applications in neuromorphic computing, cognitive wireless communication, advanced sensors, and non-volatile memory technologies. Despite its immense promise, ferrotronics faces critical challenges in areas such as miniaturization, CMOS compatibility, and a fundamental understanding of the atomistic mechanisms underpinning ferroic behavior. To address these hurdles, nitride ferroelectric (FE) semiconductors present a compelling opportunity due to their unique properties: large remnant polarization, high breakdown voltage, elevated Curie temperatures, and enhanced piezoelectric and optical responses. These properties position nitride FE semiconductors as key enablers for realizing the full potential of ferrotronics and advancing a new era of electronic innovation.