UM6P School of Physics researchers, in collaboration with leading institutions, propose a scalable method for sub-10 nm nanogap structures with atomic layer lithography.
April 8, 2025

The UM6P School of Applied and Engineering Physics, in collaboration with the Department of Physics and Astronomy, Seoul National University (SNU), School of Electrical and Electronics Engineering, Chung-Ang University, and the Department of Physics, Ulsan National Institute of Science and Technology (UNIST), has proposed a groundbreaking approach for fabricating sub-10 nm nanogap structures using an advanced Atomic Layer Lithography (ALL) method.
This collaborative study introduces a scalable, cost-effective technique for creating high-precision sub-10 nm nanogaps across entire wafers, offering significant improvements over traditional methods such as electron beam lithography (EBL) and extreme ultraviolet (EUV) lithography.
The researchers demonstrated that the new ALL method, utilizing a photoresist pattern as both a protective mask and sacrificial layer, provides uniform nanogaps with high yield, enabling large-area production of nanostructures that are critical for next-generation devices in electronics, optics, and sensing technologies.

This collaborative work positions atomic layer lithography as a promising tool for advancing the fabrication of nano-devices at a wafer scale, paving the way for new applications in quantum technologies and high-performance materials.

The complete study is available in Scientific Reports: https://lnkd.in/d6GVmSUe